SiC Substrates & Epitaxy
SiC for RF Electronics
Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating SiC substrates.
Coherent has pioneered the development of large-diameter, semi-insulating SiC substrates, and delivers high resistivity material to enable fabrication of components with low power dissipation, high frequency operation, and good thermal stability.
Semi-Insulating Silicon Carbide Material Properties
Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.
Semi-Insulating Silicon Carbide Material Properties |
|
Physical Characteristics |
|
Structure |
Hexagonal, Single Crystal |
Diameter |
Up to 200 mm |
Grades |
Prime, Development, Mechanical |
Thermal Properties |
|
Thermal Conductivity |
370 (W/mK) at room temperature |
Thermal Expansion Coefficient |
4.5 x 10-6/K |
Specific Heat (25°C) |
0.71 (J/g°C) |
Additional Key Properties of Coherent SiC Substrates (typical values) |
|
Parameter |
Semi-insulating |
Polytype |
6H |
Dopant |
Vanadium |
Resistivity |
> 1019 Ohm -cm |
Orientation |
On-axis |
Roughness, Ra |
<5Å |
Dislocation density |
< 10,000 cm-2 |
Micropipe density |
< 10cm-2 |
