SiC Power Devices & Modules
Silicon Carbide Discrete MOSFETS
Create power conversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.
Coherent SIC MOSFETs provide superior energy efficiency and performance over existing silicon devices are the only product available with a 200°C junction temperature capability, along with industry-leading avalanche ratings and superior RDS(on).
Silicon Carbide MOSFETs Features
High voltage and low RDS(on) up to 200°C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature invariant switching losses.
Avalanche ruggedness superior to silicon
Fast recovery body diode for synchronous rectification.
