Datasheet

Diode Lasers

Tapered Amplifiers For MOPA Setups

Product image of Tapered Amplifiers For MOPA Setups

InP-based tapered amplifiers are used for the amplification of an existing seed laser. The seed power between 30 mW and 60 mW can be amplified up to nearly diffraction-limited power values of 2000 mW. Such a setup is called MOPA (Master Oszillator Power Amplifier) . The rear facet and the front facet are both provided with an anti-reflection coating of less than 0.01% to avoid laser action of the amplifier chip itself. Tapered amplifiers and lasers can be used for free space optical communication, sensing, and athmospheric or automotive LiDAR.

Advantages

  • Tuning range between 1540 to 1590 nm
  • Suitable for MOPA setups up to 2000 mW
  • Nearly diffraction limited with M2 (1/e2) < 1.6
  • Side mode suppression of more than 40 dB
  • Highly anti-reflection facet coatings < 0.01%
  • Passive cooling
  • Different packages available
  • Customized packaging possible

Options

  • The TA-1550-2000 can be mounted on a c-mount or optionally on a DHP inset or a DHP frame for better handling.
  • The TA-1550-2000 can be ordered with selected beam quality parameters M2.
  • The TA-1550-2000 is also available for external cavity configurations.
Parameter TA-1550-2000
Package Tapered Amplifiers
OPTICAL PARAMETERS1
Wavelength Operation Range1 (nm) 1540 to 1590
Center Wavelength Range (nm) 1550
ASE Suppression (dB) ≥40
Output Power (W) 2
Typical Seed Power3 (mW) 50
Maximum Seed Power3 (mW) 60
Minimum Seed Power3 (mW)  30
DESIGN PARAMETERS
Output Aperture at Front Side (μm) 256 x 1.4
Divergence Parallel (95%) (degree) 10 to 12
Divergence Perpendicular (95%) (degree) 78
M2 (1/e2)4 ≤1.6
Astigmatism (µm) Depends On Operating Conditions
ELECTRICAL PARAMETERS
Typical Operation Current (2000 mW) (A) 8.8
Maximum Operation Current With Injection (A) 10
Maximum Operation Current Without Injection (A) 3
Maximum Operation Voltage (V) ≤1.3
Polarization  TE
THERMAL PARAMETERS
Operating Temperature (°C) +15 to +30
Recommended Heat Sink Temperature (°C) 20
Storage Temperature5 (°C) -20 to +60
Operating Conditions Non-Condensing Atmosphere
OTHER PARAMETERS
Heat Sink Type6 C-Mount
Cavity Length (µm) 4300
Cathode (-) Wire Flag, see also packaging drawings
Anode (+) Base Plate, see also packaging drawings
RoHS 2002/95EC Compliant Yes

Notes:
1. Tolerance of +/-2 nm, not exceeding maximum operation current
2. Lower output power possible at periphery areas with max. operation current
3. Measured in front of rear facet, optical isolator in MOPA setup will reduce seed power of 30 to 60 mW by 50%
4. Measured in accordance to ISO 11146
5. In a non condensing atmosphere
6. Other heat sinks on request

Safety

This is a laser class IV product according to IEC -Standard International Commission (Publication 825, 1993). The laser light emitted from this laser diode is invisible and/or visible and is harmful to the human eye. The safety regulations for eye and personell protection included in the IEC Standard must be observed to avoid any harm to operating personell. Avoid direct exposure and looking into the laser diode, into the collimated beam or into the fiber when it is linked to the module.

Storage and Shipping

Store and ship the diode laser with shortened electrical contacts in a clean and dry atmosphere and in a temperture range of 0°C to 60°C.

Operation and Handling

Diode lasers are extremely sensitive to over-voltage. Take extreme precaution to avoid electrostatic charges. Precautions against spiking during switching on and off the power supply must be assured. Correct polarity of power supply must be assured. During handling personell has to wear wrist straps. Grounded work surfaces and additional antistatic techniques are mandatory during handling. Device failure and safety hazard are caused by operation in excess of maximum ratings. Exceeding output power and temperature specification will result in accelerated device ageing.

Do not mount via any paste-like media!