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28 Gbps DFB 激光二极管芯片

28 Gbps FB Laser Diode Chip/1300 nm 28 Gbps NRZ DFB Laser Diode Chips

使用这些分布式反馈 (DFB) 激光二极管芯片，构建光模块和其他需要几毫瓦 13XX nm 激光输出的组件。

这些 InP 激光二极管芯片非常适合 13XX nm 光纤数据通信，并且不需要光隔离器的成本和复杂性。两种类型均具有 -132 dB/Hz^1/2的低相对强度噪声 (RIN)。

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28 Gbps – 激光二极管芯片

为单通道系统以及低成本至关重要的情况选择 FP 型号。将 DFB 芯片用于需要严格波长控制的 CWDM 和 LWDM 应用。

数据表

关键特性

所有型号均设计用于非冷却式 28 Gb/s

FP 型支持无隔离器运行
FP 工作温度 -40 °C 至 95 °C
DFB 专为 CWDM 和 LWDM 网格的 NRZ 设计
DFB 工作温度 -20 °C 至 95 °C

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