It is possible to selectively remove a layer of Indium Tin Oxide (ITO) from the surface of a plastic substrate at speeds > 1000 mm/sec using UV diode-pumped, solid-state lasers. This process produces a patterned conductive surface and leaves the non-conductive, substrate surface undamaged. Choice of wavelength is dependent on feature size and whether there are one or two conductive surfaces. For two sided conductive material used in many new device screens, 266 nm can be used to pattern one side while leaving the second side undamaged allowing a second pattern to be made on the backside. AVIA Family of DPSS Lasers MATRIX Applications
All processing was performed using the AVIA UV q-switched, diode-pumped, solid-state laser. The output beam from the AVIA UV laser was directed through a scanner and a 100-mm focal length telecentric scan lens. ITO was ablated from the plastic substrate at a speed of 1000 mm/sec. Material removal was performed without damage to the substrate.

Fig. 1 - ITO-Ablated from the Glass Substrate with a UV Laser.

Ablation using the AVIA laser enables efficient processing of large areas of ITO-coated substrates. The very fine features (<15 microns) that can be achieved make this process useful for applications in high-resolution display production.

Material	Plastic Ceramic Composite Semiconductor
Process	Ablation-Material Removal