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在直径达 200 毫米的高质量 SiC 晶圆上制造各种高性能的电力电子器件。
制造 MOSFET、IGBT 和其他组件,这些组件可用于电动和混合动力汽车以及航空航天应用中的高温、高频电力电子器件。
利用 Coherent 高意高质量的半绝缘 SiC 衬底扩大 GaN-on-SiC 射频功率放大器以及其他射频和微波器件的生产规模。
利用 Coherent 高意直径高达 200 毫米的高性能 SiC 外延片生产晶圆,缩短上市时间、降低成本并提高器件性能。
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