Dielectric Ablation
c-Si Dielectric Ablation
Lasers and laser process tools enable highest precision c-Si ablation with minimized sub-surface bulk damage.
Superior Reliability & Performance

  • Lasers and Laser-based Systems
  • Laser Measurement and Control
  • Precision Optics
  • Related Accessories

IOS tools for Edge Isolation all feature AVIA lasers; currently the dominant laser source for c-Si UV-laser Edge Isolation, with over 90% market share.Within laser Edge Isolation, a high-speed scanner directs UV or green nanosecond laser pulses around the perimeter of cells, scribing narrow grooves between the finger grid and the cell edges. The use of short-wavelength laser output enables ultra-narrow scribe lines (<30 μm), reduced ‘dead’ area around the trenches, and minimized sub-surface laser damage. Sub-surface damage – a negative outcome of using long wavelength IR lasers – can include changes to minority carrier lifetimes and bulk mAlso known as Selective Removal, Dielectric Ablation involves ablating thin layers of SiNx or SiO2 included on the cell surfaces to increase surface passivation while further assisting light transmission (front) or reflection (rear). Laser-based tools can ablate fine lines or holes with micron precision, while reducing sub-surface bulk damage to levels not affected by subsequent downstream process steps. Dielectric Ablation is a prerequisite for diffusion or plating mask formation/openings – both strong candidates for next-generation highefficiency cells. Key laser specifications include both short-wavelengths and short pulsewidths; factors which promote the AVIA, Talisker, and Paladin lasers.crocracking.

AVIA Family of DPSS Lasers
High-power lasers offered at 532, 355 and 266 nm, with output power as high as 45W.
Quasi-CW UV laser portfolio with output powers from 2W to 24W at 355 nm or 532 nm.
Talisker 500, 1000, and HE
Family of high power picosecond lasers with wavelengths ranging from 355 nm to 1064 nm.
Industrial Picosecond Laser for Microelectronics